問い合わせ: 白鳥世明 (email@example.com)
Title “Metallization for flexible and stretchable devices”
Abstract: Electronic systems on flexible and stretchable substrates have received increasing attention in the last couple of decades because they enable classes of applications that lie outside of those easily addressed with wafer-based electronics. Different approaches can be followed to achieve the fabrication of the circuits directly on the flexible substrates. In this work, some of the activities performed by our research group in this field will be presented and discussed. Electroless plating and electrodeposition on flexible and stretchable substrates, fluorinated or not, will be described, underlining the different activation processes for the substrates and their influence in promoting the adhesion of the metallic layer. Together with the metallization process, a design of the metallic pattern to achieve stretchability and an in situ mechanical characterization will be shown. The combination of this metallization processes with inkjet technology and 3D printing additive manufacturing will be introduced.
“Improving the lifetime of the NV center ensemble coupled with a
superconducting flux qubit by applying magnetic fields”
One of the promising systems to realize quantum computation is a hybrid
system where a superconducting flux qubit plays a role of a quantum
processor and the NV center ensemble is used as a quantum memory. We
have theoretically and experimentally studied the effect of magnetic
fields on the hybrid system, and found that the lifetime of the vacuum
Rabi oscillation of this system is improved by applying a few mT
magnetic fields to the NV center ensemble. Here, we construct a
theoretical model to reproduce the vacuum Rabi with/without
magnetic fields applied to the NV centers, and we determine the reason
why magnetic fields can affect the coherent properties of the NV center
ensemble. From our theoretical analysis, we quantitatively show that the
magnetic fields actually suppress the inhomogeneous broadening from the
strain in the NV centers.
Neutral Modes in Fractional Quantum Hall Regimes
Dr. Hiroyuki Inoue
Department of Condensed Matter Physics, Weizmann Institute of Science, Israel
The quantum Hall effect (QHE) is a canonical example of 2D topological phases. Being incompressible in the bulk, available low-energy charged excitations are only at the edge: gapless chiral 1D edge channels. Various collective phenomena can emerge when interactions take place between coexisting multiple edge channels. Recently, there is a surge of energy transport therein upon an observation of upstream neutral edge modes, arising from the interacting channels, in so-called hole-like fractional QHEs (FQHEs), which remained elusive despite of an early theoretical prediction. In this talk, I will describe such neutral modes detected via shot noise measurements. Surprisingly, they were found not only in the hole-like FQHEs, as theoretically expected, but also in particle-like FQHEs and, furthermore, in the bulk. Our result presents a new picture of energy transport in FQHE.