Q2B 2020 | Quantum Computing in Japan | Dr. Kohei Itoh | Keio University Quantum Computing Center

Journal Articles
2006 - Present
  • N. P. de Leon, K. M. Itoh, D. Kim, K. Mehta, T. E. Northup, H. Paik, B. S. Palmer, N. Samarth, S. Sangtawesin, and D. W. Steuerman, "Materials Challenges and Opportunities for Quantum Computing Hardware," Science, 372, 2828 (2021).
  • T. Lenz, G. Chatzidrosos, Z. Wang, L. Bougas, Y. Dumeige, A. Wickenbrock, N. Kerber, J. Zázvorka, F. Kammerbauer, M. Kläui, Z. Kazi, K.-M. C. Fu, K. M. Itoh, H. Watanabe, and D. Budker,"Imaging Topological Spin Structures Using Light-Polarization and Magnetic Microscopy,"Phys. Lev. Appl., 15, 024040 (2021).
  • K. W. Chan, H. Sahasrabudhe, W. Huang, Y. Wang, H. C. Yang, M. Veldhorst, J. C. C. Hwang, F. A. Mohiyaddin, F.E. Hudson, K. M. Itoh, A. Saraiva, A. Morello, A. Laucht, R. Rahman, and A. S. Dzurak,"Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon,"Nano Lett., 21,1517 (2021).
  • M. T. Ma̧dzik, A. Laucht, F. E. Hudson, A. M. Jakob, B. C. Johnson, D. N. Jamieson, K. M. Itoh, A. S. Dzurak, and A. Morello,"Conditional Quantum Operation of Two Exchange-Coupled Single-Donor Spin Qubits in a MOS-Compatible Silicon Device,"Nature Communications, 12, 181 (2021).
  • R. Kiga, M. Uematsu, and K. M. Itoh,"Effect of Fluorine on the Suppression of Boron Diffusion in Pre-Amorphized Silicon,"J. Appl. Phys., 128,105701 (2020).[pdf:2.6MB]
  • Yang C.H., Leon R.C.C., Hwang J.C.C., Saraiva A., Tanttu T., Huang W., Camirand Lemyre J., Chan K.W., Tan K.Y., Hudson F.E., Itoh K.M., Morello A., Pioro-Ladrière M., Laucht A., Dzurak A.S.,"Operation of a silicon quantum processor unit cell above one kelvin,"Nature, 580, 350 (2020).
  • Asaad S., Mourik V., Joecker B., Johnson M.A.I., Baczewski A.D., Firgau H.R., Mądzik M.T., Schmitt V., Pla J.J., Hudson F.E., Itoh K.M., McCallum J.C., Dzurak A.S., Laucht A., Morello A.,"Coherent electrical control of a single high-spin nucleus in silicon,"Nature, 579, 205 (2020).
  • R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. C. Lemyre, T. Tanttu, W. Huang, K.W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladrière, A. Saraiva, and A. S. Dzurak,"Coherent Spin Control of S-, P-, D- and F-Electrons in a Silicon Quantum Dot,"Nature Communications, 11, 797 (2020).
  • D. Misonou, K. Sasaki, S. Ishizu, Y. Monnai, K. M. Itoh, and E. Abe,"Construction and Operation of a Tabletop System for Nanoscale Magnetometry with Single Nitrogen-Vacancy Centers in Diamond,"AIP Advances,10,025206 (2020).[pdf:2.8MB]
  • R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, Y. Nagai, T. Endoh, and K. M. Itoh,"Oxidation-Enhanced Si Self-Diffusion in Isotopically Modulated Silicon Nanopillars,"J. Appl. Phys., 127, 045704 (2020).[pdf:2MB]
  • R. Zhao, T. Tanttu, K. Y. Tan, B. Hensen, K. W. Chan, J. C. C. Hwang, R. C. C. Leon, C. H. Yang, W. Gilbert, F. E. Hudson, K. M. Itoh, A. A. Kiselev, T. D. Ladd, A. Morello, A. Laucht, and A. S. Dzurak,"Single-Spin Qubits in Isotopically Enriched Silicon at Low Magnetic Field,"Nature Communications, 10, 5500 (2019).
  • W. Huang, C. H. Yang, K. W. Chan, T. Tanttu, B. Hensen, R. C. C. Leon, M. A. Fogarty, J. C. C. Hwang, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, and A.S. Dzurak,"Fidelity Benchmarks for Two-Qubit Gates in Silicon,"Nature, 569, 532 (2019).
  • S. B. Tenberg, S. Asaad, M. T. Madzik, M. A. I. Johnson, B. Joecker, A. Laucht, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, R. Joynt, and A. Morello,"Electron Spin Relaxation of Single Phosphorus Donors in Metal-Oxide-Semiconductor Nanoscale Devices,"Phys. Rev. B, 99,205306 (2019).
  • T. Tanttu, B. Hensen, K. W. Chan, C. H. Yang, W. Huang, M. Fogarty, F. Hudson, K. M. Itoh, D. Culcer, A. Laucht, A. Morello, and A. Dzurak,"Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction,"Phys. Rev. X, 9,021028 (2019).
  • Kazi Z., Shelby I., Brunelle N., Watanabe H., Itoh K., Wiggins P., Fu K.,"Wide-field magnetic imaging of sub-50 nm ferromagnetic nanoparticles for time-resolved bio-mechanical orientation measurements,"2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings(2019).
  • C. H. Yang, K. W. Chan, R. Harper, W. Huang, T. Evans, J. C. C. Hwang, B. Hensen, A. Laucht, T. Tanttu, F. E. Hudson, S. T. Flammia, K. M. Itoh, A. Morello, S. D. Bartlett, and A. S. Dzurak,"Silicon Qubit Fidelities Approaching Incoherent Noise Limits via Pulse Engineering," Nature Electronics, 2, 151 (2018).
  • A. Morello, G. Tosi, F. A. Mohiyaddin, V. Schmitt, V. Mourik, T. Botzem, A. Laucht J. J. Pla, S. Tenberg, R. Savytskyy, M. Madzik, F. Hudson, A. S. Dzurak, K. M. Itoh, A. M. Jakob, B. C. Johnson, J. C. McCallum, and D. M. Jamieson, "Scalable Quantum Computing with Ion-Implanted Dopant Atoms in Silicon," Technical Digest - International Electron Devices Meeting, IEDM 2018-December, 6.2.1 (2019).
  • Kazi Z., Shelby I., Brunelle N., Watanabe H., Itoh K., Wiggins P., Fu K., "Wide-field magnetic imaging of sub-50 nm ferromagnetic nanoparticles for time-resolved bio-mechanical orientation measurements," Optics InfoBase Conference Papers (Optics InfoBase Conference Papers), Part F127-CLEO_AT 2019 (2019).
  • R. Matsuoka, E. Shigesawa, S. Miyamoto, K. Sawano, and K. M. Itoh, "Fabrication of Ge MOS with Low Interface Trap Density by ALD of Al2O3 on Epitaxially Grown Ge," Semicond. Sci. Technol. 34, 014004 (2019).[pdf:874k]
  • E. Shigesawa, R. Matsuoka, M. Fukumoto, R. Sano, K. M. Itoh, H. Nohira, and K. Sawano, "Study on Al2O3/Ge Interface Formed by ALD Directly on Epitaxial Ge," Sci. Technol. 33, 124020 (2018).[pdf:964k]
  • J. Zopes, K. S. Cujia, K. Sasaki, J. M. Boss, K. M. Itoh, and C. L. Degen, "Three-Dimensional Localization Spectroscopy of Individual Nuclear Spin with Sub-Angstrom Resolution," Nature Communications 9, 4678 (2018).
  • M. A. Fogarty, K. W. Chan, B. Hensen, W. Huang, T. Tanttu, C. H. Yang, A. Laucht, M. Veldhorst, F. E. Hudson, K. M. Itoh, D. Culcer, T. D. Ladd, A. Morello, and A. S. Dzurak, "Integrated Silicon Qubit Platform with Single-Spin Addressability, Excange Control and Single-Shot Single-Triplet Readout," Nature Communications 9, 4370 (2018).
  • K. Takeda, J. Yoneda, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera, and S. Tarucha, "Optimized Electrical Control of a Si/SiGe Spin Qubit in the Presence of an Induced Frequency Shift," npj Quantum Information 54, 54 (2018).[pdf:1.2MB]
  • K. W. Chen, W. Huang, C. H. Yang, J. C. C. Hwang, B. Hensen, T. Tanttu, F. E. Hudson, K. M. Itoh, A. Laucht, A. Morello, A. S. Dzurak, "Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy," Phys. Rev. Appl. 10, 044017 (2018).[pdf:2.7MB]
  • J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, A. S. Dzurak, A. Morello, D. N. Jamieson, J. C. McCallum, and K. M. Itoh, "Coherent Control via Weak Measurements in 31P Single-Atom Electron and Nuclear Spin Qubits," Phys. Rev. B 98, 155201 (2018).[pdf:649k]
  • K. Sasaki, K. M. Itoh, and E. Abe, "Determination of the Position of a Single Nuclear Spin from Free Nuclear Precessions Detected by a Solid-State Quantum Sensor," Phys. Rev. B 98, 121405 (2018).[pdf:561k]
  • K. Yamada, M. Yamada, H. Maki, and K. M. Itoh, "Fabrication of Arrays of Tapered Silicon Micro-/Nano-Pillars by Metal-Assisted Chemical Etching and Anisotropic Wet Etching," Nanotechnology 29, 28LT01 (2018).[pdf:3.4MB]
  • Y. Noma, H. Kotegawa, T. Kubo, H. Tou, H. Harima, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, A. Nakamura, Y. Homma, R. Honda, and D. Aoki, "Anisotropic Magnetic Fluctuations in Ferromagnetic Supweconductor UGe2: 73Ge-NQR Study at Ambient Pressure," J. Phys. Soc. Jpn. 87, 033704 (2018).[pdf:988k]
  • J. Zopes, K. Sasaki, K. S. Cujia, J. M. Boss, K. Chang, T. F. Segawa, K. M. Itoh, and C. L. Degen, "High-Resolution Quantum Sensing with Shaped Control Pulses," Phys. Rev. Lett. 119, 260510 (2017).[pdf:328k]
  • J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, and S. Tarucha, "A Quantum-Dot Spin Qubit with Coherence Limited by Charge Noise and Fidelity Higher Than 99.9%," Natuere Nanotechnology 13, 102-106 (2018).
  • B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and S. A. Lyon, "Coherent Rabi Dynamics of a Superradiant Spin Ensemble in a Microwave Cavity," Phys. Rev. X 7, 031002 (2017).[pdf:2.1MB]
  • D. P. Franke, M. P. D. Pfluger, K. M. Itoh, and M. S. Brandt, "Multiple-Quantum Transitions and Charge-Induced Decoherence of Donor Nuclear Spins in Silicon," Phys. Rev. Lett. 118, 246401 (2017).[pdf:793k]
  • K. Ito, H. Saito, K. Sasaki, H. Watanabe, T. Teraji, K. M. Itoh, and E. Abe, "Nitrogen-Vacancy Centers Created by N+ Ion Implantation Through Screening SiO2 Layers on Diamond," Appl. Phys. Lett. 110, 213105 (2017).[pdf:1.1MB]
  • K. Sasaki, E. E. Kleinsasser, Z. Zhu, W.-D. Li, H. Watanabe, K.-M. Fu, K. M. Itoh, and E. Abe, "Dynamic Nuclear Polarization Enhanced Magnetic Field Sensitivity and Decoherence Spectroscopy of an Ensemble of Near-Surface Nitrogen-Vacancy Centers in Diamond," Appl. Phys. Lett. 110, 192407 (2017).[pdf:824k]
  • A. Laucht, R. Kalra, S. Simmons, J. P. Dehollain, J. T. Muhonen, F. A. Mohiyaddin, S. Freer, F. E. Hudson, K. M. Itoh, D.N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello, "A Dressed Spin Qubit in Silicon," Nature Nanotechnology 12, 61-66 (2017).
  • T. Fujii, T. Okada, T. Isoda, M. E. Syazwan, M.-T. Chentir, K. M. Itoh, I. Yamashita, and S. Samukawa, "Fabrication of Germanium Nanodisk Array by Neutral Beam Etching with Protein as Etching Mask," J. Vac. Sci. Technol. B 35, 02180 (2017).[pdf:1.4MB]
  • P. A. Mortemousque, S. Rosenius, G. Pica, D. P. Franke, T. Sekiguchi, A. Truong, M. P. Vlasenko, L. S. Vlasenko, M. S. Brandt, R. G. Elliman, and K. M. Itoh, "Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field," Nanotechnology 27, 494001 (2016).[pdf:1.8MB]
  • J. Herrmann, M. A. Appleton, K. Sasaki, Y. Monnai, T. Teraji, K. M. Itoh, and E. Abe, "Polarization- and Frequency-Tunable Microwave Circuit for Selective Excitation of Nitrogen-Vacancy Spins in Diamond," Appl. Phys. Lett. 109, 183111 (2016).[pdf:1.0MB]
  • A. Laucht, S. Simmons, R. Kalra, G. Tosi, J. P. Dehollain, J. T. Muhonen, S. Freer, F. E. Hudson, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello, "Breaking the Rotating Wave Approximation for a Strongly Driven Dressed Single-Electron Spin," Phys. Rev. B 94, 161302(R) (2016).[pdf:1.0MB]
  • A. J. Sigillito, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M. Itoh, and S. A. Lyon, "Large Stark Tuning of Donor Electron Spin Qubits in Germanium," Phys. Rev. B 94, 125204 (2016).[pdf:917k]
  • H. Watanabe, H. Umezawa, T. Ishikawa, K. Kaneko, S. Shikata, J. Ishi-Hayase, and K. M. Itoh, "Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition," IEEE Transactions on Nanotechnology 15, 614-618 (2016).[pdf:522k]
  • K. Sasaki, Y. Monnai, S. Saijo, R. Fujita, H. Watanabe, J. Ishi-Hayase, K. M. Itoh, and E. Abe, "Broadband, Large-Area Microwave Antenna for Optically Detected Magnetic Resonance of Nitrogen-Vacancy Centers in Diamond," Rev. Sci. Instrum. 87, 053904 (2016).[pdf:1.2MB]
  • E. E. Kleinsasser, M. M. Stanfield, J. K. Q. Banks, Z. Zhu, W.-D. Li, V. M. Acosta, H. Watanabe, K. M. Itoh, and K.-M. C. Fu, "High Density Nitrogen-Vacancy Sensing Surface Created Via He+ Ion Implantation of 12C Diamond," Appl. Phys. Lett. 108, 202401 (2016).[pdf:623k]
  • D. P. Franke, M. P. D. Pfl¨uger, P.-A. Mortemousque, K. M. Itoh, and M. S. Brandt, "Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon," Phys. Rev. Lett. 93, 161303 (R) (2016).[pdf:274k]
  • E. S. Petersen, A. M. Tyryshkin, J. J. L. Morton, E. Abe, S. Tojo, K. M. Itoh, M. L. W. Thewalt, and S. A. Lyon, "Nuclear Spin Decoherence of Neutral 31P Donors in Silicon: Effect of Environmental 29Si Nuclei," Phys. Rev. B 93, 161202(R) (2016).[pdf:532k]
  • T. Isoda, M. Uematsu, and K. M. Itoh, "Effect of Carbon Situating at End-of-Range Defects on Silicon Self-Diffusion Investigated Using Pre-Amorphized Isotope Multilayers," Jpn. J. Appl. Phys. 55, 036504 (2016).[pdf:878k]
  • G. Wolfowicz, P.-A. Mortemousque, R. Guichard, S. Simmons, M. L. W. Thewalt, K. M. Itoh, and J. J. L. Morton, "29Si Nuclear Spins as a Resource for Donor Spin Qubits in Silicon," New J. Phys. 18, 023021 (2016).[pdf:695k]
  • M. Yamada, K. Sawano, M. Uematsu, Y. Shimizu, K. Inoue, Y. Nagai, and K. M. Itoh, "Suppression of Segregation of the Phosphorus δ-Doping Layer in Germanium by Incorporation of Carbon," Jpn. J. Appl. Phys. 55, 031304 (2016).[pdf:757k]
  • Y. Kusano, H. Saito, L. S. Vlasenko, M. P. Vlasenko, E. Ohta, and K. M. Itoh, "Low Symmetry Configurations of Vacancy-Oxygen Complexes in Irradiated Silicon," J. Appl. Phys. 118, 245703 (2015).[pdf:963k]
  • J. P. Dehollain, S. Simmons, J. T. Muhonen, R. Kalra, A. Laucht, F. Hudson, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello, "Bell’s Inequality Violation with Spins in Silicon," Nature Nanotechnology Published online, 16 November 2015, DOI:10.1038/NNANO.2015.262.
  • A. J. Sigillito, R. M. Jock, A. M. Tyryshkin, J.W. Beeman, E. E. Haller, K. M. Itoh, and S. A. Lyon, "Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium," Phys. Rev. Lett. 115, 247601 (2015).[pdf:723k]
  • M. Veldhorst, R. Ruskov, C. H. Yang, J. C. C. Hwang, F. E. Hudson, M. E. Flatt´e, C. Tahan, K. M. Itoh, A. Morello, and A. S. Dzurak, "Spin-Orbit Coupling and Operation of Multivalley Spin Qubits," Phys. Rev. B 92, 201401(R) (2015).[pdf:747k]
  • M. Veldhorst, C. H. Yang, J. C. C. Hwang, W. Huang, J. P. Dehollain, J. T. Muhonen, S. Simmons, A. Laucht, F. E. Hudson, K. M. Itoh, A. Morello, and A. S. Dzurak, "A Two-Qubit Logic Gate in Silicon," Nature 526, 410-414 (2015).
  • M. Yamada, K. Sawano, M. Uematsu, and K. M. Itoh, "Suppression of Surface Segregation of the Phosphorous δ-Doping Layer by Insertion of an Ultra-Thin Silicon Layer for Ultra-Shallow Ohmic Contacts on n-Type Germanium," Appl. Phys. Lett. 107, 132101 (2015).[pdf:667k]
  • T. Isoda, M. Uematsu, and K. M. Itoh, "Observation of Silicon Self-Diffusion Enhanced by the Strain Originated from End-of-Range Defects Using Isotope Multilayers," J. Appl. Phys. 118, 115706 (2015).[pdf:1.5MB]
  • D. P. Franke, F. M. Hrubesch, M. Künzl, H.-W. Becker, K. M. Itoh, M. Stutzmann, F. Hoehne, L. Dreher, and M. S. Brandt, "Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors," Phys. Rev. Lett. 115, 057601 (2015).[pdf:518k]
  • A. Truong, A. O. Watanabe, P. A. Mortemousque, K. Ando, T. Sato, T. Taniyama, and K. M. Itoh, "Interfacial Spin-Glass-Like State in Mn5Ge3 Single Crystalline Films Grown on Germanium Substrates," Phys. Rev. B 91, 214425 (2015).[pdf:1.9MB]
  • S. Mukherjee, U. Givan, S. Senz, A. Bergeron, S. Francoeur, M. de la Mata, J. Arbiol, T. Sekiguchi, K. M. Itoh, D. Isheim, D. N. Seidman, and O. Moutanabbir, "Phonon Engineering in Isotopically Disordered Silicon Nanowires," Nano Lett. 15, 3885-3893 (2015).[pdf:3.6MB]
  • T. Yukawa, M. Motira, M. Karasawa, S. Ishimura, N. Mayama, H. Uchida, Y. Kawamura, K. M. Itoh, and M. Owari, "Reconstruction in Atom Probe Tomography Considering the Cone Angle of Needle-Like Shaped Samples and Evaluation of Reliability," e-J. Surf. Sci. Nanotech. 13, 235-238 (2015).[pdf:1.2MB]
  • H. Kotegawa, K. Fukumoto, T. Toyama, H. Tou, H. Harima, A. Harada, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Ōnuki, K. M. Itoh, and E. E. Haller, "73Ge-Nuclear Magnetic Resonance/Nuclear Quadrupole Resonance Investigation of Magnetic Properties of URhGe," J. Phys. Soc. Jpn. 84, 054710 (2015).[pdf:1.6MB]
  • A. Laucht, J. T. Muhonen, F. A. Mohiyaddin, R. Kalra, J. P. Dehollain, S. Freer, F. E. Hudson, M. Veldhorst, R. Rahman, G. Klimeck, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello, "Electrically Controlling Single-Spin Qubits in a Continuous Microwave Field," Sci. Adv. 1, e1500022 (2015).[pdf:1.2MB]
  • F. Hoehne, L. Dreher, D. P. Franke, M. Stutzmann, L. S. Vlasenko, K. M. Itoh, and M. S. Brandt, "Submillisecond Hyperpolarization of Nuclear Spins in Silicon," Phys. Rev. Lett. 114, 117602 (2015).[pdf:400k]
  • J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello, "Quantifying the Quantum Gate Fidelity of Single-Atom Spin Qubits in Silicon by Randomized Benchmarking," J. Phys.: Condens. Matter 27, 154205 (2015).[pdf:443k]
  • L. Dreher, F. Hoehne, H. Morishita, H. Huebl, M. Stutzmann, K. M. Itoh, and M. S. Brandt, "Pulsed Low-Field Electrically Detected Magnetic Resonance," Phys. Rev. B 91, 075314 (2015).[pdf:866k]
  • Y. Romach, C. Müller, T. Unden, L. J. Rogers, T. Isoda, K. M. Itoh, M. Markham, A. Stacey, J. Meijer, S. Pezzagna, B. Naydenov, L. P. McGuinness, N. Bar-Gill, and F. Jelezko, "Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond," Phys. Rev. Lett. 114, 017601 (2015).[pdf:502k]
  • P. Gumann, O. Patange, C. Ramanathan, H. Haas, O. Moussa, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, and D. G. Cory, "Inductive Measurement of Optically Hyperpolarized Phosphorous Donor Nuclei in an Isotopically Enriched Silicon-28 Crystal," Phys. Rev. Lett. 113, 267604 (2014).[pdf:319k]
  • K. M. Itoh and H. Watanabe, "Isotope engineering of silicon and diamond for quantum computing and sensing applications," MRS Communications 4, 143-157 (2014).[pdf:818k]
  • A. Truong, A. O. Watanabe, T. Sekiguchi, P. A. Mortemousque, T. Sato, K. Ando, and K. M. Itoh, "Evidence of a Perpendicular Magnetocrystalline Anisotropy in a Mn5Ge3 Epitaxial Thin Film Revealed by Ferromagnetic Resonance," Phys. Rev. B 90, 224415 (2014).[pdf:3.8M]
  • J. T. Muhonen, J. P. Dehollain, A. Laucht, F. E. Hudson, R. Kalra, T. Sekiguchi, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello, "Storing Quantum Information for 30 Seconds in a Nanoelectronic Device," Nature Nanotechnology 9, 986–991 (2014).
  • M. Veldhorst, J. C. C. Hwang, C. H. Yang, A. W. Leenstra, B. de Ronde, J. P. Dehollain, J. T. Muhonen, F. E. Hudson, K. M. Itoh, A. Morello, and A. S. Dzurak, "An Addressable Quantum Dot Qubit with Fault-Tolerant Control-Fidelity," Nature Nanotechnology 9, 981–985 (2014).
  • M. Karasawa, M. Fujii, M. Morita, S. Ishimura, N. Mayama, H. Uchida, Y. Kawamura, K. M. Itoh, and M. Owari, "Investigation of Mixing Effects of Silicon Isotopes under Shave-off Condition Using Atom Probe Tomography," Surface and Interface Analysis 46, 1200 (2014).[pdf:998k]
  • T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, J. W. Ager, E. E. Haller, M. L. W. Thewalt, J. J. L. Morton, S. A. Lyon, and K. M. Itoh, "Host Isotope Mass Effects on the Hyperfine Interaction of Group-V Donors in Silicon," Phys. Rev. B 90, 121203(R) (2014).[pdf:436k]
  • D. P. Franke, M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, M. S. Brandt, and K. M. Itoh, "Spin-Dependent Recombination at Arsenic Donors in Ion-Implanted Silicon," Appl. Phys. Lett. 105, 112111 (2014).[pdf:590k]
  • M. Uematsu, K. Matsubara, and K. M. Itoh, J. J. L. Morton, A. A. Houck, D. I. Schuster, and S. A. Lyon, "Simultaneous Observation of the Diffusion of Self-atoms and Co-Implanted Boron and Carbon in Silicon Investigated by Isotope Heterostructures," Jpn. J. Appl. Phys. 53, 071302 (2014).[pdf:670k]
  • A. J. Sigillito, H. Malissa, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt , K. M. Itoh, J. J. L. Morton, A. A. Houck, D. I. Schuster, and S. A. Lyon, "Fast, Low-Power Manipulation of Spin Ensembles in Superconducting Microresonators," Appl. Phys. Lett. 104, 222407 (2014).[pdf:985k]
  • T. Rosskopf, A. Dussaux, K. Ohashi, M. Loretz, R. Schirhagl, H. Watanabe, S. Shikata, K. M. Itoh, and C. L. Degen, "Investigation of Surface Magnetic Noise by Shallow Spins in Diamond," Phys. Rev. Lett. 112, 147602 (2014).[pdf:496k]
  • P. A. Mortemousque, S. Berger, T. Sekiguchi, C. Culan, R. G. Elliman, and K. M. Itoh, "Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin-Dependent Recombination," Phys. Rev. B 89, 155202 (2014).[pdf:2.2M]
  • K. Ohashi, T. Rosskopf, H. Watanabe, M. Loretz, Y. Tao, R. Hauert, S. Tomizawa, T. Ishikawa, J. Ishi-Hayase, S. Shikata, C. L. Degen, and K. M. Itoh, "Negatively Charged Nitrogen-Vacancy Centers in a 5 nm Thin 12C Diamond Films," Nano Lett. 13, 4733-4738 (2013).[pdf:1.2M][Youtube]
  • M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, and K. M. Itoh, "Identification of Photo-Induced Spin-Triplet Recombination Centers Situated at Si Surfaces and Si/SiO2 Interfaces," Appl. Phys. Lett. 103, 111601 (2013).[pdf:691k][Youtube]
  • K. Fang, V. M. Acosta, C. Santori, Z. Huang, K. M. Itoh, H. Watanabe, S. Shikata, and R. G. Beausoleil, "High-Sensitivity Magnetometry Based on Quantum Beats in Diamond Nitrogen-Vacancy Centers," Phys. Rev. Lett. 110, 130802 (2013).[pdf:510k]
  • H. Wu, E. M. Gauger, R. E. George, M. Mottonen, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L. W. Thewalt, and J. J. L. Morton, "Geometric Phase Gates with Adiabatic Control in Electron Spin Resonance," Phys. Rev. A 87, 032326 (2013).[pdf:359k]
  • T. Itahashi, H. Hayashi, M. R. Rahman, K. M. Itoh, L. S. Vlasenko, M. P. Vlasenko, and D. S. Poloskin, "Optical and Dynamic Nuclear Polarization of 29Si Nuclei via Photoexcited Triplet States of Oxygen-Vacancy Complexes in Isotopically Controlled Silicon," Phys. Rev. 87, 075201 (2013).[pdf:732k]
  • Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, K. M. Itoh, and Y. Nagai, "Atomic-Scale Characterization of Germanium Isotopic Multilayers by Atom Probe Tomography," J. Appl. Phys. 113, 026101 (2013).[pdf:1.7MB]
  • R. Hirano, H. Tsuchida, M. Tajima, K. M. Itoh, and K. Maeda, "Polarization of Photoluminescence from Partial Dislocations in 4H-SiC," Appl. Phys. Express 6, 011301 (2012).[pdf:2.6MB]
  • M. Uematsu, K. M Itoh, G. Mil'nikov, H. Minari, and N. Mori, "Discrete Distribution of Implanted and Annealed Arsenic Atoms in Silicon Nanowires and its Effect on Device Performance," Nanoscale Research Lett. 7:685 (2012).[pdf:1.8MB]
  • W. Akhtar, T. Sekiguchi, T. Itahashi, V. Filidou, J. J. L. Morton, L. Vlasenko, and K. M. Itoh, "Rabi Oscillation and Electron-Spin-Echo Envelope Modulation of the Photoexcited Triplet Spin System in Silicon," Phys. Rev. B 86, 115206 (2012).[pdf:698k]
  • R. Hirano, Y. Sato, H. Tsuchida, M. Tajima1, K. M. Itoh, and K. Maeda, "Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC," Appl. Phys. Express 5, 091302 (2012).[pdf:565k]
  • P. A. Mortemousque, T. Sekiguchi, C. Culan, M. P. Vlasenko, R. G. Elliman, L. S. Vlasenko, and K. M. Itoh, "Spin Dependent Recombination Based Magnetic Resonance Spectroscopy of Bismuth Donor Spins in Silicon at Low Magnetic Fields," Appl. Phys. Lett. 101, 082409 (2012).[pdf:785k]
  • R. Hirano, S. Miyamoto, M. Yonemoto, S. Samukawa, K. Sawano, Y. Shiraki, and K. M. Itoh, "Room-Temperature Observation of Size Effects in Photoluminescence of Si0:8Ge0:2/Si Nanocolumns Prepared by Neutral Beam Etching," Appl. Phys. Express 5, 082004 (2012).[pdf:863k]
  • Y. Kawamura, K. C. Y. Huang, S. V. Thombare, S. Hu, M. Gunji, T. Ishikawa, M. L. Brongersma, K. M. Itoh, and P. C. McIntyre, "Direct-Gap Photoluminescence from Germanium Nanowires," Phys. Rev. B 86, 035306 (2012).[pdf:520k]
  • T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, and K. M. Itoh, "Upper Limit of Two-Dimensional Hole Gas Mobility in Strained Ge/SiGe Heterostructures," Appl. Phys. Lett. 100, 222102 (2012).[pdf:836k]
  • R. Hirano, Y. Sato, M. Tajima, K. M. Itoh, and K. Maeda, "Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC," Mater. Sci. Forum 717-720, 395-398 (2012).
  • T. Tanaka, G. Tsuchiya, Y. Hoshi, K. Sawano, Y. Shiraki, and K. M. Itoh, "Experimental and Theoretical Analysis of the Temperature Dependence of the Two-Dimensional Electron Mobility in a Strained Si Quantum Well," J. Appl. Phys. 111, 073715 (2012).[pdf:743k]
  • T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, T. Sekiguchi, and K. M. Itoh, "Identification of a Paramagnetic Recombination Center in Silicon/Silicon-Dioxide Interface," Appl. Phys. Lett. 100, 152107 (2012).[pdf:603k]
  • T. Ishikawa, K.-M. C. Fu, C. Santori, V. M. Acosta, R. G. Beausoleil, H. Watanabe, S. Shikata, and K. M. Itoh, "Optical and Spin Coherence Properties of Nitrogen-Vacancy Centers Placed in a 100 nm Thick Isotopically Purified Diamond Layer," Nano Lett. 12, 2083-2087 (2012).[pdf:316k]
  • S. Hu, Y. Kawamura, K. C. Y. Huang, Y. Li, A. F. Marshall, K. M. Itoh, M. L. Brongersma, and P. C. McIntyre, "Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells," Nano Lett. 12, 1385-1391 (2012).[pdf:2.6M]
  • W. Akhtar, V. Filidou, T. Sekiguchi, E. Kawakami, T. Itahashi, L. Vlasenko, J. J. L. Morton, and K. M. Itoh, "Coherent Storage of Photoexcited Triplet States Using 29Si Nuclear Spins in Silicon," Phys. Rev. Lett. 108, 097601 (2012).[pdf:522k]
  • G. C. Knee, S. Simmons, E. M. Gauger, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L. W. Thewalt, G. Andrew, D. Briggs, and S. C. Benjamin, "Violation of a Leggett–Garg Inequality with Ideal Non-Invasive Measurements," Nature Communications 3, 606 (2012).
  • A. M. Tyryshkin, S. Tojo, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, T. Schenkel, M. L. W. Thewalt, K. M. Itoh, and S. A. Lyon, "Electron Spin Coherence Exceeding Seconds in High Purity Silicon," Nature Materials 11, 143-147 (2012).
  • M. F. Budiman, W. Hu, M. Igarashi, R. Tsukamoto, T. Isoda, K. M Itoh, I. Yamashita, A. Murayama, Y. Okada, and S. Samukawa, "Control of Optical Bandgap Energy and Optical Absorption Coefficient by Geometric Parameters in Sub-10 nm Silicon-Nanodisc Array Structure," Nanotechnology 23, 065302 (2012).[pdf:966k]
  • M. Tomita, M. Koike, H. Akutsu, S. Takeno, Y. Kawamura, Y. Shimizu, M. Uematsu, and K. M. Itoh, "Investigation of the Factors Determining the SIMS Depth Resolution in Silicon-Isotope Multiple Layers," J. Vac. Sci. Technol. B 30, 011803 (2011).[pdf:2.9M]
  • T. Ishikawa, K. Koga, T. Itahashi, K. M. Itoh, and L. S. Vlasenko, "Optical Properties of Triplet States of Excitons Bound to Interstitial-Carbon Interstitial-Oxygen Defects in Silicon," Phys. Rev. B 84, 115204 (2011).[pdf:502k]
  • Y. Kawamura, M. Uematsu, Y. Hoshi, K. Sawano, M. Myronov, Y. Shiraki, E. E. Haller, and K. M. Itoh, "Self-Diffusion in Compressively Strained Ge," J. Appl. Phys. 110, 034906 (2011).[pdf:299k]
  • X. Y. Wang, C.H. Huang, R. Tsukamoto, P. A. Mortemousque, K. M. Itoh, Y. Ohno, and S. Samukawa, "Damage-Free Top-Down Processes for Fabricating Two-Dimensional Arrays of 7 nm GaAs Nanodiscs Using Bio-Templates and Neutral Beam Etching," Nanotechnology 22, 365301 (2011).[pdf:1.7MB]
  • A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and M. S. Brandt, "Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si," Appl. Phys. Lett. 99, 032101 (2011).[pdf:184k]
  • W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, and K. M. Itoh, "Electrical Detection of Cross Relaxation between Electron Spins of Phosphorus and Oxygen-Vacancy Centers in Silicon," Phys. Rev. B 84, 045204 (2011).[pdf:440k]
  • L. J. García, Y. Kawamura, M. Uematsu, J. M. Hernández-Mangas, and K. M. Itoh, "Monte Carlo Simulation of Silicon Atomic Displacement and Amorphization Induced by Ion Implantation," J. Appl. Phys. 109, 123507 (2011).[pdf:784k]
  • M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, and H.-J. Pohl, "Optically-Detected NMR of Optically-Hyperpolarized 31P Neutral Donors in 28Si," J. Appl. Phys. 109, 102411 (2011).[pdf:652k]
  • Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, and K. M. Itoh, "Depth and Lateral Resolution of Laser-Assisted Atom Probe Microscopy of Silicon Revealed by Isotopic Heterostructures," J. Appl. Phys. 109, 036102 (2011).[pdf:652k]
  • S. Simmons, R. M. Brown, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and J. J. L. Morton, "Entanglement in a Solid-State Spin Ensemble," Nature 470, 69-72 (2011).
  • H. Morishita, E. Abe, W. Akhtar, L. S. Vlasenko, A. Fujimoto, K. Sawano, Y. Shiraki, L. Dreher, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, M. S. Brandt, and K. M. Itoh, "Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon," Applied Physics Express 4, 021302 (2011).[pdf:193k]
  • O. Moutanabbir, D. Isheim, D. N. Seidman, Y. Kawamura, and K. M. Itoh, "Ultraviolet-Laser Atom-Probe Tomographic Three-Dimensional Atom-by-Atom Mapping of Isotopically Modulated Si Nanoscopic Layers," Appl. Phys. Lett. 98, 013111 (2011).[pdf:6.7M]
  • M. R. Rahman, M. P. Valasenko, L. S. Vlasenko, E. E. Haller, and K. M. Itoh, "Splitting of Electron Paramagnetic Resonance Lines of Lithium–Oxygen Centers in Isotopically Enriched 28Si Single Crystals," Solid State Commun. 150, 2275-2277 (2010).[pdf:313k]
  • T. Ishikawa, T. Sekiguchi, K. Yoshizawa, K. Naito, M. L. W. Thewalt, amd K. M. Itoh, "Zeeman Photoluminescence Spectroscopy of Isoelectronic Beryllium Pairs in Silicon," Solid State Commun. 150, 1827-1830 (2010).[pdf:463k]
  • M. R. Rahman, T. Itahashi, M. P. Vlasenko, L. S. Vlasenko, E. E. Haller, and K. M. Itoh, "Dynamic Nuclear Polarization of 29Si Nuclei Induced by Li and Li–O Centers in Silicon," Jpn. J. Appl. Phys. 49, 103001 (2010).[pdf:203k]
  • H. Wu, R. E. George, J. H. Wesenberg, K. Mølmer, D. I. Schuster, R. J. Schoelkopf, K. M. Itoh, A. Ardavan, J. J. L. Morton, and G. A. D. Briggs, "Storage of Multiple Coherent Microwave Excitations in an Electron Spin Ensemble," Phys. Rev. Lett. 105, 14053 (2010).[pdf:485k]
  • A. R. Stegner, H. Tezuka, T. Andlauer, M. Stutzmann, M. L. W. Thewalt, M. S. Brandt, and K. M. Itoh, "Isotope Effect on Electron Paramagnetic Resonance of Boron Acceptors in Siliconm," Phys. Rev. B 82, 115213 (2010).[pdf:1.7MB]
  • E. Abe, A. M. Tyryshkin, S. Tojo, J. J. L. Morton, W. M. Witzel, A. Fujimoto, J. W. Ager, E. E. Haller, J. Isoya, S. A. Lyon, M. L. W. Thewalt, and K. M. Itoh, "Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei," Phys. Rev. B 82, 121201(R) (2010).[pdf:600k] (selected as Editor's Suggestion by Phys. Rev. B)
  • S. Miyamoto, O. Moutanabbir, T. Ishikawa, M. Eto, E. E. Haller, K. Sawano, Y. Shiraki, and K. M. Itoh, "Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Self-Assembled Type-II Quantum Dots," Phys. Rev. B 82, 073306 (2010).[pdf:365k]
  • S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara, "Resonant Escape over an Oscillating Barrier in a Single-Electron Ratchet Transfer," Phys. Rev. B 82, 033303 (2010).[pdf:338k]
  • Y. Kawamura, Y. Shimizu, H. Oshikawa, M. Uematsu, E. E. Haller, and K. M. Itoh, "Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation," Appl. Phys. Express 3, 071303 (2010).[pdf:266k]
  • O. Moutanabbir, S. Miyamoto, E. E. Haller, and K. M. Itoh, "Transport of Deposited Atoms throughout Strain-Mediated Self-Assembly," Phys. Rev. Lett. 105, 026101 (2010).[pdf:364k]
  • R. Hirano, M. Tajima, and K. M. Itoh, "Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC," Mater. Sci. Forum 645-648, 355-358 (2010).
  • H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L. W. Thewalt, S. A. Lyon, K. M. Itoh, and M. S. Brandt, "Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon," Phys. Rev. B 81, 161203(R) (2010).[pdf:328k]
  • H. Mukuda, T. Ohara, M. Yashima, Y. Kitaoka, R. Settai, Y. Onuki, K. M. Itoh, and E. E. Haller, "Spin Susceptibility of Noncentrosymmetric Heavy-Fermion Superconductor CeIrSi3 under Pressure: 29Si Knight-Shift Study on Single Crystal," Phys. Rev. Lett. 104, 017002 (2010).[pdf:504k]
  • H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, M. Eto, and K. M. Itoh, "Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon," Phys. Rev. B 80, 205206 (2009).[pdf:299k]
  • M. R. Rahman, L. S. Vlasenko, E. E. Haller, and K. M. Itoh, "Electron Paramagnetic Resonance and Dynamic Nuclear Polarization of 29Si Nuclei in Lithium-Doped Silicon," Physica B 404, 5060-5062 (2009).[pdf:163k]
  • W. Akhtar, H. Morishita, L. S. Vlasenko, D. S. Poloskin, and K.M.Itoh, "Electrically Detected Magnetic Resonance of Phosphorous Due to Spin Dependent Recombination with Triplet Centers in γ-Irradiated Silicon," Physica B 404, 4583-4585 (2009).[pdf:235k]
  • T. Ishikawa, K. Koga, T. Itahashi, L. S. Vlasenko, and K. M. Itoh, "Photoluminescence from Triplet States of Isoelectronic Bound Excitons at Interstitial Carbon-Intersititial Oxygen Defects in Silicon," Physica B 404, 4552-4554 (2009).[pdf:195k]
  • Y. Kawamura, Y. Shimizu, H. Oshikawa, M. Uematsu, E. E. Haller, and K. M. Itoh, "Quantitative Evaluation of Germanium Displacement Induced by Arsenic Implantation Using Germanium Isotope Superlattices," Physica B 404, 4546-4548 (2009).[pdf:321k]
  • A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H.R iemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. Haller, "Single-Frequency Laser Spectroscopy of the Boron Bound Exciton in 28Si," Phys. Rev. B, 80, 195203 (2009).[pdf:302k]
  • M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh, K. Sawano, Y. Shiraki, and E. E. Haller, "Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices," ECS Transactions 25, 51-54 (2009).[pdf:267k]
  • Y. Shimizu, Y. Kawamura, M. Uematsu, K. M. Itoh, M. Tomita, M. Sasaki, H. Uchida, and M. Takahashi, "Atom Probe Microscopy of Three-Dimensional Distribution of Silicon Isotopes in 28Si/30Si Isotope Superlattices with Sub-Nanometer Spatial Resolution," J. Appl. Phys., 106, 076102 (2009).[pdf:294k]
  • H. Hayashi, T. Itahashi, K. M. Itoh, L. S. Vlasenko, and M. P. Vlasenko, "Dynamic Nuclear Polarization of 29Si Nuclei in Isotopically Controlled Phosphorus Doped Silicon," Phys. Rev. B 80, 045201 (2009).[pdf:620k]
  • H. Mukuda, S. Nishide, A. Harada, K. Iwasaki, M. Yogi, M. Yashima, Y. Kitaoka, M. Tsujino, T. Takeuchi, R. Settai, Y. Okuni, E. Bauer, K. M. Itoh, and E. E. Haller, "Multiband Superconductivity in Heavy Fermion Compound CePt3Si without Inversion Symmetry:An NMR Study on a High-Quality Single Crystal," J. Phys. Soc. Jpn. 78, 014705 (2009).[pdf:304k]
  • A. Yang, M. Steger, T. Sekiguchi, M. L. W. Thewalt, T. D. Ladd, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, and H.-J. Pohl, "Simultaneous Subsecond Hyperpolarization of the Nuclear and Electron Spins of Phosphorus in Silicon by Optical Pumping of Exciton Transitions," Phys. Rev. Lett. 102, 257401 (2009).[pdf:229k]
  • S. Miyamoto, O. Moutanabbir, E. E. Haller, and K. M. Itoh, "Spatial Correlation of Self-Assembled Isotopically Pure Ge/Si(001) Nanoislands," Phys. Rev. B 79, 165415 (2009).[pdf:502k]
  • J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager III, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, and D. Bougeard, "A Schottky Top-Gated Two-Dimensional Electron System in a Nuclear Spin Free Si/SiGe Heterostructure," Phys. Status Solidi RRL Vol. 3, 61-63 (2009).[pdf:2.44MB]
  • Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano and Y. Shiraki, "Behaviors of Neutral and Charged Silicon Self-Interstitials during Transient Enhanced Diffusion in Silicon Investigated by Isotope Superlattices," J. Appl. Phys., 105, 013504 (2009). [pdf:369k]
  • M. Myronov, Y. Shiraki, T. Mouri, and K.M. Itoh, "Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well," Thin Solid Films 517, 359-361 (2008).[pdf:253k]
  • A. Harada, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Okuni, K. M. Itoh, E. E. Haller, and H. Harima, "Evolution of an Unconventional Superconducting State inside the Antiferromagnetic Phase of CeNiGe3 under Pressure:A 73Ge-Nuclear-Quadrupole-Resonance Study," J. Phys. Soc. Jpn. 77, 103710 (2008).[pdf:2.1MB]
  • S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara, "Escape Dynamics of a Few Electrons in a Single-Electron Ratchet using Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor," Appl. Phys. Lett. 93, 222103 (2008). [pdf:924k]
  • Y. Shimizu, A. Takano, and K. M. Itoh, "Silicon Isotope Superlattices: Ideal SIMS Standards for Shallow Junction Characterization," Applied Surface Science, 255, 1345-1347 (2008).[pdf:263k]
  • A. Takano, Y. Shimizu, and K. M. Itoh, "Film Thickness Determining Method of the Silicon Isotope Superlattices by SIMS," Applied Surface Science, 255, 1430-1432 (2008).[pdf:593k]
  • M. Naganawa, Y. Shimizu, M. Uematsu, K. M. Itoh, K. Sawano, Y. Shiraki, and E. E. Haller, "Charge States of Vacancies in Germanium Investigated by Simultaneous Observation of Germanium Self-Diffusion and Arsenic Diffusion," Appl. Phys. Lett., 93, 191905 (2008).[pdf:227k]
  • O. Moutanabbir, S. Miyamoto, A. Sagara, H. Oshikawa, and K. M. Itoh, "Tuning the Luminescence Emission of {105}-Faceted Ge QDs Superlattice Using Proton Implantation and Thermal Annealing,"Thin Solid Films, 517,391-394 (2008).[pdf:264k]
  • H. Hayashi, K. M. Itoh, and L. S. Vlasenko, "Nuclear Magnetic Resonance Linewidth and Spin Diffusionin 29Si Isotopically Controlled Silicon,"Phys. Rev. B 78, 153201 (2008).[pdf:121k]
  • M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, and K. M. Itoh, "Observation of High Mobility 2DHG with Very High Hole Density in the Modulation Doped Strained Ge Quantum Well at Room Temperature," Physica E 40, 1935-1937 (2008).[pdf:195k]
  • M. Naganawa, Y. Kawamura, Y. Shimizu, M. Uematsu, K. M. Itoh, H. Ito, M. Nakamura, H. Ishikawa, and Y. Ohji, "Accurate Determination of the Intrinsic Diffusivities of Boron, Phosphorus, and Arsenic in Silicon : The Influence of SiO2 Films," Jpn. J. Appl. Phys., Vol. 47, No. 8 (2008).[pdf:95k]
  • A. Yang, M. Steger, H. J. Lian, M. L. W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, III, S. A. Lyon, M. Konuma, and M. Cardona, "High-Resolution Photoluminescence Measurement of the Isotopic-Mass Dependence of the Lattice Parameter of Silicon," Phys. Rev. B 77, 113203 (2008).[pdf:143k]
  • M. Myronov, K. Sawano, K. M. Itoh, and Y. Shiraki, "Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well," Applied Physics Express 1, 051402 (2008).[pdf:446k]
  • R. Van Meter, W. J. Munro, K. Nemoto, and K. M. Itoh, "Arithmetic on a Distributed-Memory Quantum Multicomputer, " ACM Journal on Emerging Technologies in Computing Systems, 3, 17 (2008).[pdf:612k]
  • Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano, and Y. Shiraki, "Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices," Applied Physics Express, 1, 021401 (2008).[pdf:636k]
  • M. Myronov, K. Sawano, K. M. Itoh, and Y. Shiraki, "Room-Temperature Transport Properties of High Drift Mobility Two-Dimensional Electron Gas Confined in a Strained Si Quantum Well," Appl. Phys. Express 1, 021402 (2008).[pdf:108k]
  • K. Ibano, K. M. Itoh, and M. Uematsu, "Generation of Excess Si Species at Si/SiO2 Interface and Their Diffusion into SiO2 during Si Thermal Oxidation," J. Appl. Phys. 103, 026101 (2008).[pdf:88k]
  • A. Harada, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, "Intimate Interplay between Superconductivity and Antiferromagnetism in CeNiGe3:A 73Ge-NQR Study under Pressure," Physica B 403, 1020-1022 (2008)[pdf:164k]
  • A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, "Experimental Evidence for Ferromagnetic Spin-Pairing Superconductivity Emerging in UGe2: A 73Ge-Nuclear-Quadrupole-Resonance Study under Pressure," Physical Review B 75, 140502(R) (2007).[pdf:483k]
  • A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, "Pressure-Induced Antiferromagnetic Superconductivity in CeNiGe3: A 73Ge-NQR Study under Pressure," Journal of Magnetism and Magnetic Materials 310, 614-616 (2007).[pdf:179k]
  • S. Kawasaki, T. Sada, T. Miyoshi, H. Kotegawa, H. Mukuda, Y. Kitaoka, T. C. Kobayashi, T. Fukuhara, K. Maezawa, K. M. Itoh, and E. E. Haller, "73Ge-NQR Study of Heavy-Fermion Compound CeNi2Ge2," Journal of Magnetism and Magnetic Materials 310, 590-592 (2007).[pdf:157k]
  • M. Uematsu, Y. Shimizu, and K. M. Itoh, "Defect Studies for the Development of Nano-Scale Silicon Diffusion Simulators," Physica B 401-402, 511-518 (2007).[pdf:369k]
  • Y. Shimizu, A. Takano, M. Uematsu, and K. M. Itoh, "Simultaneous Observation of the Behavior of Impurities and Silicon Atoms in Silicon Isotope Superlattices," Physica B 401-402, 597-599, 2007.[pdf:347k]
  • M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, and K. M. Itoh, "Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures," Appl. Phys. Lett. 91, 082108 (2007).[pdf:194k]
  • K. Romanyuk, J. Myslivecek, V. Cherepanov, T. Sekiguchi, S. Yoshida, K. M. Itoh, and B. Voigtländer, "Optimized Ge Nanowire Arrays on Si by Modified Surfactant Mediated Epitaxy," Phys. Rev. B 75, 241309(R) 2007.[pdf:397k]
  • M. Myronov, Y. Shiraki, T. Mouri and K. M. Itoh, "Enhancement of Room Temperature Holes Conductivity in Narrow and Strained Ge Quantum Well by Double-Side Modulation Doping," Appl. Phys. Lett., 90 (19), 192108, 2007.[pdf:250k]
  • M. L. W. Thewalt, A. Yang, M. Steger, D. Karaiskaj, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, E. E. Haller, J. W. Ager III, and K. M. Itoh, "Direct Observation of the Donor Nuclear Spin in a Near-Gap Bound Exciton Transition: 31P in Highly Enriched 28Si," J. Appl. Phys. 101, 081724 (2007). [pdf:605k]
  • T. Sekiguchi, S. Yoshida, Y. Shiren, K. M. Itoh, J. Myslivecek, and B. Voigtländer, "Self-assembly of Periodic Nanoclusters of Si and Ge along Single Steps of a Vicinal Si(111)," J. Appl. Phys. 101, 081702 (2007). [pdf:107k]
  • Y. Shimizu, M. Uematsu, and K. M. Itoh,"Experimental Evidence of the Vacancy Mediated Silicon Self-Diffusion in Single Crystalline Silicon," Phys. Rev. Lett. 98, 095901 (2007). [pdf:288k]
  • O. Moutanabbir, S. Miyamoto, A. Fujimoto, and K. M. Itoh, "Isotopically Controlled Self-Assembled Ge/Si Nanostructures," Journal of Crystal Growth 301-302, 324-329 (2007).[pdf:217k]
  • T. Sekiguchi, S. Yoshida, K. M. Itoh, J. Myslivecek and B. Voigtländer, "One-Dimensional Ordering of Ge Nanoclusters along Atomically Straight Steps of Si(111),"Appl. Phys. Lett. 90, 013108 (2006); Selected for the January 22, 2007 issue (Vol. 15, No. 3) of Virtual Journal of Nanoscale Science & Technology.[pdf:275k]
  • H. Hayashi, W. Ko, T. Itahashi, A. Sagara, K. M. Itoh, L. S. Vlasenko, and M. P. Vlasenko, "Dynamic Nuclear Polarization of 29Si Nuclei in the Isotope Enriched N-type Silicon," Phys. Status Solidi C 3, No. 12, 4388-4391 (2006).[pdf:175k]
  • L. S. Vlasenko, M. P. Vlasenko, D. S. Poloskin, R. Laiho, H. Hayashi, T. Itahashi, A. Sagara, and K. M. Itoh, "Electron Paramagnetic Resonance and Dynamic Nuclear Polarization via the Pphotoexcited Triplet Sstates of Radiation Defects in Natural and 29Si Isotope Enriched Silicon," Phys. Status Solidi C 3, No. 12, 4376-4379 (2006).[pdf:241k]
  • A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. Haller, "Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States," Phys. Rev. Lett. 97, 227401 (2006).[pdf:264]
  • S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K.M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi, "Observation of Si Emission during Thermal Oxidation of Si(001) with High-Resolution RBS," Nuclear Instruments and Methods in Physics Research B 249, 390-393 (2006).[pdf:197k]
  • S. Kawasaki, T. Sada, T. Miyoshi, H. Kotegawa, H. Mukuda, Y. Kitaoka, T. C. Kobayashi, T. Fukuhara, K. Maezawa, K. M. Itoh, and E. E. Haller, "Evidence for Unconventional Superconducting Fluctuations in Heavy-Fermion Compound CeNi2Ge2," J. Phys. Soc. Jpn. 75, 043702 (2006).[pdf:181k]
  • A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, "Unconventional Superconductivity in the Itinerant Ferromagnet UGe2:73Ge-NQR Study under Pressure," Physica B 378-380, 963-964 (2006).[pdf:123k]
  • F. Onishi, Y. Inatomi,T. Tanaka, N. Shinozaki, M. Watanabe, A. Fujimoto, and K. Itoh, "Time-of-Flight Secondary Mass Spectrometry Analysis of Isotope Composition for Measurement of Self-Diffusion Coefficient," Jpn. J. Appl. Phys.45, 5274-5276 (2006).[pdf:100k]
  • K. K. Kohil, G. Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, and K. M. Itoh, "Isotope Dependence of the Lifetime of the 1136 cm-1 Vibration of Oxygen in Silicon," Phys. Rev. Lett. 96, 225503 (2006).[pdf:232k]
  • E. Abe, J. Isoya, and K. M. Itoh, "Pulsed EPR Study of Spin Coherence Time of P Donors in Isotopically Controlled Si," Pysica B 376-377, 28-31 (2006).[pdf:648k]
  • A. Yang, H. J. Lian, and M. L. W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, and S. A. Lyon, "Isotopic Mass Dependence of the Lattice Parameter in Silicon Determined by Measurement of Strain-induced Splitting of Impurity Bound Exciton Transitions," Pysica B 376-377, 54-56 (2006).[pdf:100k]
  • D. Tsurumi, K. M. Itoh and H. Yamada-Kaneta, "Host Isotope Effect on the Localized Vibrational Modes of Oxygen Dimers in Isotopically Enriched Silicon," Pysica B 376-377, 959-962 (2006).[pdf:150k]
  • M. Uematsu, H. Kageshima, S. Fukatsu, K. M. Itoh, K. Shiraishi, M. Otani, and A. Oshiyama,"Enhanced Si and B Diffusion in Semiconductor-grade SiO2 and the Effect of Strain on Diffusion," Thin Solid Films 508, 270-275 (2006).[pdf:361k]
  • Y. Shimizu, K. M. Itoh, "Growth and Characterization of Short-period Silicon Isotope Superlattices,"Thin Solid Films 508, 160-162 (2006).[pdf:131k]
  • T. Sekiguchi, S. Yoshida, and K. M. Itoh, "Si Atom Wire Growth for Quantum Information Processing," Thin Solid Films 508, 231-234 (2006).[pdf:238k]
  • R. Van Meter, K. M. Itoh, and T. D. Ladd, "Architecture-Dependent Execution Time of Shor's Algorithm," quant-ph/0507023 (2006)
2001 - 2005
  • R. N. Pereira, B. B. Nielsen, J. Coutinho, V. J. B. Torres, R. Jones, T. Ohya, K. M. Itoh, and P. R. Briddon, "Anharmonicity and Lattice Coupling of Bond-Centered Hydrogen and Interstitial Oxygen Defects in Monoisotopic Silicon Crystals," Phys. Rev. B 72,115212 (2005).[pdf:181k]
  • T. Ohya, K. M. Itho, R. N. Pereira, and B. B. Nielsen, "Host Isotope Effect on the Local Vibration Modes of VH2 and VOH2 Defects in Isotopically Enriched 28Si, 29Si and 30Si Single Crystals," Jpn. J. Appl. Phys. 44, No.10, 7309-7313 (2005).[pdf:112k]
  • Y. Kitaoka, H. Kotegawa, A. Harada, S. Kawasaki, Y. Kawasaki, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, "Novel Phase Diagram of Superconductivity and Ferromagnetism in UGe2: a 73Ge-NQR Study under High Pressure," J. Phys.: Condens. Matter 17, 975-986 (2005).[pdf:280k]
  • T. Sekiguchi, S. Yoshida, and K. M. Itoh, "Self-assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface," Phys. Rev. Lett. 95, 106101 (2005).[pdf:510k]
  • S. Yoshida, T. Sekiguchi, and K. M. Itoh, "Atomically Straight Steps on Vicinal Si(111) Surfaces Prepared by Step-parallel Current in the Kink-up Direction," Appl. Phys. Lett. 87, 031903 (2005).[pdf:324k]
  • A. Harada, H. Kotegawa, S. Kawasaki, Y. Kawasaki, G.-q.Zheng, Y. Kitaoka, E. Yamamoto, Y. Haga, Y. Onuki, K. Itoh, E. E. Haller, "Evidence for the Microscopic Coexistence of Superconductivity and Ferromagnetism in UGe2:73Ge-NMR/NQR Study," Physica B 359-361, 1057-1059 (2005).[pdf:206k]
  • A. Harada, S. Kawasaki, H. Kotegawa, Y. Kitaoka, Y. Haga, E. Yamamoto,Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, "Cooperative Phenomenon of Ferromagnetism and UnconventionalSuperconductivity in UGe2: A 73Ge-NQR Study under Pressure," J. Phys. Soc. Japan 74, No. 10, 2675-2678 (2005).[pdf:335k]
  • G. Davies, S. Hayama, S. Hao, J. Coutinho,S. K. Estreicher, M. Sanati, and K. M. Itoh, "Lattice Isotope Effects on the Widths of Optical Transitions in Silicon," J. Phys.: Condens. Matter 17, S2211-2217 (2005).[pdf:246k]
  • A. S. Verhulst, I. G. Rau, Y. Yamamoto, and K. M. Itoh, "Optical Pumping of 29Si Nuclear Spins in Bulk Silicon at High Magnetic Field and Liquid Helium Temperature," Phys. Rev. B 71, 235206 (2005).[pdf:260k]
  • D. F. Wang, A.Takahashi, Y. Matsumoto, K. M. Itoh, Y. Yamamoto, T. Ono, and M. Esashi, "Magnetic Mesa Structures Fabricated by Reactive Ion Etching with CO/NH3/Xe Plasma Chemistry for an All-Silicon Quantum Computer," Nanotechnology,16, 990-994 (2005).[pdf:487k]
  • R. Van Meter, and K. M. Itoh,"Fast Quantum Modular Exponentiation,"Phys. Rev. A 71, 052320 (2005).[pdf:128k]
  • E. Abe, J. Isoya, and K. M. Itoh, "Electron Spin Coherence of Phosphorus Donors in Isotopically Purified29Si," Journal of Superconductivity 18, 157 (2005). [pdf:86k]
  • Gordon Davies, S. Hayama, Shiqiang Hao, B. Bech Nielsen, J. Coutinho, M. Sanati, S. K. Estreicher, and K. M. Itoh, "Host Isotope Effects on Midinfrared Optical Transitions in Silicon," Phys. Rev. B 71, 115212 (2005). [pdf:84k]
  • Kohei M. Itoh, "An All-Silicon Linear Chain NMR Quantum Computer," Solid State Comm. 133, 747 (2005). [pdf:252k]
  • T. D. Ladd, D. Maryenko, Y. Yamamoto, E.Abe, and K. M. Itoh, "Coherence Time of Decoupled Nuclear Spins in Silicon," Phys. Rev. B 71, 014401 (2005). Selected for the January 17, 2005 issue of Virtual Journal of Nanoscale Science & Technology, and for the January 2005 issue of Virtual Journal of Quantum Information.[pdf:416k]
  • E. Abe, A. Fujimoto, J. Isoya, S. Yamasaki, and K. M. Itoh, "Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon due to Environmental 29Si Nuclear Spins ," cond-mat/0512404 (2005)
  • S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, Y. Takahashi, and K. Shiraishi, "The Effect of the Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2,"Jpn. J. Appl. Phys. 43, 7837-7842 (2004).[pdf:180k]
  • M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi, "Simulation of Correlated Diffusion of Si and B in Thermally Grown SiO2," J. Appl. Phys. 96, 5513-5519 (2004).[pdf:132k]
  • M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi, "Correlated Diffusion of Silicon and Boron in Thermally Grown SiO2," Appl. Phys. Lett. 85, 221-223 (2004).[pdf:62.5k]
  • H. Kotegawa, A. Harada, S. Kawasaki, Y. Kawasaki, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E.E. Haller, and H. Harima, "Evidence for Uniform Coexistence of Ferromagnetism and Unconventional Superconductivity in UGe2: A 73Ge-NQR Study under Pressure," J. Phys. Soc. Jpn. 74, 705-711 (2005).[pdf:739k]
  • S. Hayama, G. Davies, and K. M. Itoh, "Photoluminescence Studies of Implantation Damage Centers in 30Si," J. Appl. Phys. 96, 1754 (2004).[pdf:55k]
  • E. Abe, K. M. Itoh, J. Isoya, and S. Yamasaki, "Electron-Spin Phase Relaxation of Phosphorus Donors in Nuclear-Spin-Enriched Silicon," Phys. Rev. B 70, 033204 (2004). Selected for the August 9, 2004 issue of Virtual Journal of Nanoscale Science & Technology, and for the August 2004 issue of Virtual Journal of Quantum Information.[pdf:67k]
  • S. Hayama, G. Davies, J. Tan, J. Coutinho, R. Jones, and K. M. Itoh, "Lattice Isotope Effects on Optical Transitions in Silicon," Phys. Rev. B 70, 035202 (2004).[pdf:103k]
  • A. Hirai, and K. M. Itoh, "Site Selective Growth of Ge Quantum Dots on AFM Patterned Si Substrates," Physica E 23, 248 (2004).[pdf:299k]
  • M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, K. Shiraishi, and U. Gosele, "Modeling of Si Self-Diffusion in SiO2 :Effect of the Si/SiO2 Interface Including Time-Dependent Diffusivity," Appl. Phys. Lett. 84, No. 6, 876-878 (2004). [pdf:68k]
  • K. M. Itoh, M. Watanabe, Y. Ootuka, E. E. Haller, and T. Ohtsuki, "Complete Scaling Analysis of the Metal-Insulator Transition in Ge:Ga: Effects of Doping-Compensation and Magnetic Field," J. Phys. Soc. Jpn., 73, 173-183 (2004).[pdf:266k]
  • T. Graf, T. Ishikawa, K. M. Itoh, E. E. Haller, M. Stutzmann, and M. S. Brandt, "Hyperfine Interactions at Dangling Bonds in Amorphous Germanium," Phys. Rev. B 68, 205208 (2003).[pdf:325k]
  • I. G. Kuleev, I. I. Kuleev, A. N. Taldenkov, A. V. Inyushkin, V. I. Ozhogin, K. M. Itoh, and E. E. Haller, "Normal Processes of Phonon-Phonon Scattering and the Drag Thermopower in Germanium Crystals with Isotopic Disorder," Journal of Experimental and Theoretical Physics, Vol. 96, No. 6, 1078-1088 (2003).[pdf:141k]
  • S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K. Shiraishi, "The Effect of Partial Pressure of Oxygen on Self-Diffusion on Si in SiO2," Jpn. J. Appl. Phy., 42, 1492-1494 (2003).[pdf:89k]
  • A. V. Inyushkin, A. N. Taldenkov, V. I. Ozhogin, K. M. Itoh, and E. E. Haller, "Isotope Effect on the Phonon-Drag Component of the Thermoelectric Power of Germanium," Phys. Rev. B 68, 153203 (2003).[pdf:50k]
  • S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K. Shiraishi,"Effect of the Si/SiO2 Interface on Self-diffusion of Si in Semiconductor-grade SiO2," Appl. Phy. Lett. 83, 3897-3899 (2003).[pdf:58k]
  • R. N. Pereira, T.Ohya, K. M. Itoh, and B. Bech Nielsen, "Local Vibrational Modes of Bond-centerd H in 28Si, 29Si, and 30Si crystals," Physica B 340-342, 697-700 (2003).[pdf:298k]
  • K. Tanigaki, T. Shimizu, K. M. Itoh, J. Teraoka, Y. Moritomo, and S. Yamanaka, "Mechanism of Superconductivity in the Polyhedral-Network Compound Ba8Si46," Nature Materials, 2, 653-655 (2003).[pdf:152k]
  • T. Kojima, K. M. Itoh, and Y. Shiraki, "Growth and Characterization of 28Sin/30Sin Isotope Superlattices," Appl. Phys. Lett. Vol. 83, 2318-2320 (2003).[pdf:141k]
  • K. M. Itoh, J. Kato, F. Uemura, A.K. Kaliteyevskii, O.N.Godisov, G. G. Devyatych, A.D. Bulanov, A. V. Gusev, I.D. Kovalev, P. G. Sennikov, H.-J. Pohl, N.V. Abrosimov, and H. Riemann, "High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth,"Jpn. J. Appl. Phys. Pt. 1, 42, 6248-6251(2003).[pdf:139k]
  • A. S. Verhulst, D. Maryenko, Y. Yamamoto, and K. M. Itoh, "Double and Single Peaks in Nuclear Magnetic Resonance Spectra of Natural and 29Si Enriched Single Crystal Silicon," Phys. Rev. B, Vol. 68, 054105 (1-6) (2003).[pdf:280k]
  • J. Kato, K. M. Itoh, H. Yamda-Kaneta, H.-J. Pohl, "Host Isotope Effect on the Localized Vibrational Modes of Oxygen in Isotopically Enriched 28Si, 29Si and 30Si Single Crystals," Phys. Rev. B 68, 035205(2003).[pdf:196k]
  • H. Kotegawa, S. Kawasaki, A. Harada, Y. Kawasaki, K. Okamoto, G-q. Zheng, Y. Kitaoka, E. Yamamoto, Y. Haga, Y.Onuki, K. M. Itoh and E. E Haller, "Unconventional Superconductivity in Ferromagnetic UGe2: a73 Ge Nuclear Magnetic Resonance / Nuclear Quadrupole Resonance Study," J. Phys.: Condens. Matter 15, S2043-2046 (2003).[pdf:134k]
  • K. M. Itoh "Silicon Quantum Computers,"Solid State Physics, 38, 269-278 (2003), review article in Japanese.
  • E. Abe, K. M. Itoh, T. D. Ladd, J. R. Goldman, F. Yamaguchi, and Y. Yamamoto,"Solid-State Silicon NMR Quantum Computer," Journal of Superconductivity Vol. 16(1), 175-178(2003).[pdf:138k]
  • T. Takahashi, S. Fukatsu, K. M. Itoh, M,Uematsu,A. Fujiwara, H. Kageshima, Y. Takahashi, and K, Shiraishi,"Self-Diffusion of Si in Thermally Grown SiO2 under Equilibrium Conditions," J. Appl. Phys. Vol. 93, No. 6, 3674-3676(2003).[pdf:53k]
  • K. M. Itoh, M. Watanabe, Y. Ootuka, and E. E. Haller, "Comparison of the Effects of the Doping-Compensation and Magnetic-Field on the Metal-Insulator Transition of Ge:Ga," J. Phys. Soc. Jpn. Suppl. Vol. 72, 181-182(2003).[pdf:142k]
  • J. Kato and K. M. Itoh, "Far-Infrared Spectroscopy of Coulomb Gap in Compensated Semiconduntors," J. Phys. Soc. Jpn. Suppl. Vol. 72, 215-216(2003).[pdf:157k]
  • A. V. Kolobov, K. Morita, K. M. Itoh, and E. E. Haller, "A Raman Scattering Study of Self-Assembled Pure Isotope Ge/Si(100) Quantum Dots," Appl. Phys. Lett. Vol. 81, No. 20, 3855-3857(2002).[pdf:80k]
  • T.D. Ladd, J. R. Goldman, F. Yamaguchi, Y. Yamamoto, E.Abe, and K. M. Itoh, "An All Silicon Quantum Computer," Phys. Rev. Lett. 89, 017901-1(2002).[pdf:110k]
  • K. Morita, K. M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi, Y. Shiraki, and E. E. Haller, "Raman Spectra of 70Ge/76Ge Isotope Heterostructures with Argon 488nm and 514.5nm Excitations, " Physica B, 316-317, 561-564(2002).[pdf:100k]
  • J.Kato, K. M. Itoh, and E. E. Haller,"Observation of the Random-Correlated Transition of Ionized Impurity Distribution in Compensate Semiconductors," Phys. Rev. B, 65, 241201(R)1-4(2002).[pdf:80k]
  • J. Kato, K. M. Itoh, and E. E. Haller, "ElectricField Broadening of Arsenic Donor States in Strongly Compensated N-Type Ge:(As,Ga)," Physica B, 316-317,561-564 (2002).[pdf:120k]
  • K.Morita, K. M. Itoh, L. Hoffmann, B. Bech Nielsen, H. Harima, and K. Mizoguchi,"Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si1-xGex:C," Jpn. J. Appl. Phys. 40, 5905-5906(2001).[pdf:70k]
  • J.Kato, K. M. Itoh, and E. E. Haller, "Correlated to Random Transitionof Ionized Impurity Distribution in N-Type Ge:(As;As)," Physica B, 308-310, 521-524(2001).[pdf:130k]
  • H.Iwata and K. M. Itoh, "Donor and Acceptor Concentration Dependence of theElectron Mobility and the Hall Scattering Factor in N-Type 4H- and 6H-SiC," J. Appl. Phys.,89,6228-6234,(2001).[pdf:135k]
  • M. Nakajima, H. Harima, K. Morita, K. M. Itoh, K.Mizoguchi, E. E. Haller, "Coherent Confined LO Phonons in 70 Ge/ 74Ge Isotope Superlattice," Phys. Rev. B 63, 161304(R)(2001).[pdf:85k]
  • K. M. Itoh and E. E. Haller, "Isotopically Engineered Semiconductors New Media for the Investigation of Nuclear SpinRelated Effects in Solids," Physica E, 10, 463-466 (2001).[pdf:90k]
1996 - 2000
  • Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller, "Localization Length and Impurity Dielectric Susceptibility in theCritical Regime of the Metal-Insulator Transition in Homogeneously Doped P-TypeGe," Phys. Rev. B, 62,R2255-R2258 (2000).[pdf:70k]
  • H.Iwata, K. M. Itoh, G. Pensl, "Theory ofthe Anisotropy of the Electron Mobility in N-Type 4H- and 6H-SiC," J. Appl.Phys., 88, 1956-1961 (2000).[pdf:125k]
  • K.Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N.Usami, Y. Shiraki, and E. E.Haller, "Growth and Characterization of 70Gen/74GenIsotope Superlattices," Thin Solid Films, 369, 405-408 (2000). [pdf:230k]
  • M.Nakajima, K. Mizoguchi, K. Morita, K. M. Itoh, H. Harima, and S. Nakashima, "Comparison of Coherent and Incoherent LOPhonons In Isotopic 70Ge/74Ge Superlattices," J.Lumin., 87-89, 942-944 (2000).[pdf:160k]
  • K.M. Itoh, "Variable Range HoppingConduction in Neutron-Transmutation-Doped 70Ge:Ga," Phys. Stat.Sol. (b), 218, 211-216 (2000).[pdf:190k]
  • M.Watanabe, K. M. Itoh, Y. Ootuka, and E. E. Haller, "Metal-Insulator Transition of NTD 70Ge:Ge in Magnetic Field," Physica B, 284-288, 1677-1678 (2000).[pdf:80k]
  • K.Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin, "Growth and Characterization of the Isotopically Enriched 28SiBulk Single Crystal," Jpn. J. Appl. Phys. 38, L1493-L1495 (1999).[pdf:125k]
  • K.M. Itoh, M. Watanabe, Y. Ootuka, and E. E. Haller, "Scaling Analysis of the Low Temperature Conductivity inNeutron-Transmutation-Doped 70Ge:Ga," Ann. Phys. (Leipzig), 8, 631-637(1999). [pdf:340k]
  • M.Watanabe, K. M. Itoh, Y. Ootuka, and E. E. Haller, "Critical Exponent for Localization Length inNeutron-Transmutation-Doped 70Ge:Ga," Ann. Phys.(Leipzig), 8, Spec. Issue, SI-3-SI-9, 273-276(1999). [pdf:335k]
  • M.Watanabe, K. M. Itoh, Y. Ootuka, and E. E. Haller, "Metal-Insulator Transition of Isotopically EnrichedNeutron-Transmutation-Doped 70Ge:Ga in Magnetic Fields," Phys.Rev. B, 60, 15817-15823 (1999)[pdf:95k]
  • V.I. Ozhogin, N. A. Babushikina, L. M. Belova, and A. P. Zhernov, E. E. Haller,K. M. Itoh, "Isotope Effect for theThermal Expansion Coefficient of Germanium," JETP 88, 135-137 (1999).[pdf:470k]
  • K.Lassmann,C. Linsenmaier, F. Maier, F. Zeller, E. E. Haller, K. M. Itoh, L. I.Khirunenko, B. Pajot, and H. Mussig, "Isotopic Shifts of the Low-Energy Excitations of Interstitial Oxygen in Germanium," Physica B, 263-264, 384-387 (1999).[pdf:100k]
  • T.Kinoshita, K. M. Itoh, M. Schadt, and G. Pensl, "Theory of the Electron Mobility in N-Type 6H-SiC," J.Appl. Phys., 85, 8193-8198 (1999).[pdf:235k]
  • C.S. Olsen, J. W. Beeman, K. M. Itoh, J. Farmer, V. I. Ozhogin, and E. E. Haller, "Selenium Double Donors in Neutron Transmutation Doped, Isotopically Controlled Germanium," Solid State Comm., 108, 895-898 (1998).[pdf:100k]
  • A. Gööbel, D. T. Wang, M Cardona, L.Pintschovius, W. Reichardt, J. Kulda, N. Pyka, E. E. Haller, and K. Itoh, "Effect of Isotope Disorder onEnergies and Lifetimes of Phonons in Germanium," Phys. Rev. B, 58, 10510-10522 (1998).[pdf:255k]
  • MichioWatanabe, Youiti Ootuka, Kohei M. Itoh, and Eugene E. Haller, "Electrical Properties of IsotopicallyEnriched Neutron-Transmutation Doped 70Ge:Ga Near theMetal-Insulator Transition," Phys. Rev. B, 58, 9851-9857 (1998).[pdf:100k]
  • J.M. Zhang, M. Giehler, A. Göbel, T. Ruf, and M. Cardona, E. E. Hallerand K. Itoh, "Optical Phonons inIsotopic Ge Studied by Raman Scattering," Phys. Rev. B, 57, 1348-1351 (1998).[pdf:100k]
  • K.Fujita, J. Muto, and K. M. Itoh, "Morphological,Electrical, and Optical Properties of Heat-Treated Magnesium PhthalocyanineFilms," J. Mater. Sci. Lett. 16,1894-1897 (1997).[pdf:105k]
  • M.Asen-Palmer, K. Bartowski, E. Gmelin, M. Cardona, A. P. Zhernov, V. Ozhogin, A.Inyushikin, A. Taldenkov, K. Itoh, and E. E. Haller, "Thermal Conductivity of Germanium Crystals with Different IsotopicCompositions," Phys. Rev. B, 56,9431-9447 (1997).[pdf:325k]
  • K.M. Itoh, T. Kinoshita, J. Muto, N. M. Heagel, W. Walukiewicz, O. D. Dubon, J.W. Beeman, and E. E. Haller, "CarrierScattering by Neutral Divalent Impurities in Semiconductors: Theory andExperiment," Phys. Rev. B 56,1906-1910 (1997).[pdf:110k]
  • EmilioArtacho, Felix Yudurain, Bernard Pajot, Rafael Ramirez, Carlos P. Herrero,Ludmila I. Khirunenko, Kohei M. Itoh, Eugene E. Haller, "Interstitial Oxygen in Germanium and Silicon," Phys. Rev. B 56, 3820-3833 (1997).[pdf:285k]
  • K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, L. A. Reichertz, E. Kreysa,T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, and V.I. Ozhogin, "Hopping Conduction andMetal-Insulator Transition in Isotopically Enriched Neutron Transmutation Doped70Ge:Ga," Phys. Rev. Lett. 77, 4058-4061 (1996).[pdf:125k]
  • H.G. Kubota, J. Muto, and K. M. Itoh, "DirectFormation of x1-MgPc Films by the Micelle Disruption Method," J. Mater. Sci. Lett. 15, 1475-1477(1996).[pdf:115k]
  • Y.Harada, K. Fujii, T. Ohyama, K. M. Itoh, and E. E. Haller, "Stark Broadening of Impurity Absorption Lines by Inhomogeneous Electric Fields in Highly Compensated Germanium," Phys. Rev. B 53, 16272-16278 (1996).[pdf:115k]
  • Sadoulet, D. Akerib, P. D. Barnes, Jr., A. Cummings, A. Da Silva, R. Diaz, J.Emes, S. Golwala, E. E. Haller, K. Itoh, W. Knowlton, F. Queinnec, R. R. Ross,D. Seitz, T. Shutt, G. Smith, W. Stockwell, and S. White, "Particle Detection and Non-EquilibriumPhonons: Experience with Large Germanium Crystals and NTD Ge Thermistors," Physica B 219&220, 741-743(1996).[pdf:440k]
  • V.I. Ozhogin, A. V. Inyushikin, A. V. Tikhomirov, G. E. Popov, E. Haller, and K.Itoh, "Isotope Effect in the ThermalConductivity of Germanium Single Crystals," JETP Lett. 63, 490-494 (1996), [Pis'ma Zh. Eksp.Teor. Fiz. 63, 463-467 (1996).[pdf:85k]
  • K.M. Itoh, J. Muto, W. Walukiewicz, J. W. Beeman, E. E. Haller, A. J. Mayur, Hyunjung Kim, M. Dean Sciacca, A. K.Ramdas, R. Buczko, J. W. Farmer, and V. I. Ozhogin, "Evidence for Correlated Hole Distribution inNeutron-transmutation-doped Isotopically Controlled Germanium," Phys.Rev. B 53, 7797-7803 (1996).[pdf:155k]
  • T.Shutt, D. S. Akerib, P. D. Barnes Jr., A. Cummings, A. Da Silva, R. Diaz, J. Emes,S. R. Golwala, E. E. Haller, K. Itoh, B. Knowlton, F. Quiennec, R. R. Ross, B.Sadoulet, D. Seitz, G. Smith, W. Stockwell, T. Trumbull, R. Therrien, S. White,and B. A. Young, "Recent Resultswith a 62 g Ge Cryogenic Dark Matter Detector," Nucl. Inst. Meth. A, 370, 165-167 (1996).[pdf:150k]
1991 - 1995
  • K.M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer,and V. I. Ozhogin "Neutral ImpurityScattering in Isotopically Engineered Ge," Phys. Rev. B 50, 16995-17000 (1994).[pdf:945k]
  • K.M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, A. Rudnev, A.Tikhomirov, and V. I. Ozhogin, "NeutronTransmutation Doping of Isotopically Engineered Ge," Appl. Phys. Lett.64, 2121-2123 (1994).[pdf:430k]
  • A.J. Mayur, M. Dean Sciacca, M. K. Udo, A. K. Ramdas, K. M. Itoh, J. A. Wolk, andE. E. Haller, "Fine Structure of theAsymmetric Stretching Vibration of Dispersed Oxygen in Monoisotopic Germanium," Phys. Rev. B 49, 16293-16299 (1994).[pdf:630k]
  • C.Parks, A. K. Ramdas, and S. Rodriguez, K. M. Itoh, and E. E. Haller, "Electronic Band Structure of IsotopicallyPure Germanium: Modulated Transmission and Reflectivity Study," Phys.Rev. B 49, 14244-14250 (1994).[pdf:575k]
  • H.D. Fuchs, K. M. Itoh, and E. E. Haller, "Isotopically Controlled Germanium: A New Medium for the Study ofCarrier Scattering by Neutral Impurities," Phil. Mag. B, 70, 661-670 (1994).[pdf:470k]
  • GordonDavies, E. C. Lightowlers, T. S. Hui, V. Ozhogin, K. M. Itoh, W. L. Hansen, andE. E. Haller, "Isotope Dependence ofthe Lowest Direct Energy Gap in Crystalline Germanium," Semic. Sci. andTechnol. 8, 2201-2204 (1993).[pdf:250k]
  • K.M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I.Ozhogin, "Low Temperature HoppingConduction in Neutron Transmutation Doped Isotopically Enriched 70Ge:GaSingle Crystals," J. Low Temp. Physics, 93, 307-312 (1993).[pdf:375k]
  • W.B. Knowlton, K. M. Itoh, J.W. Beeman, J. H. Emes, and E. E. Haller, "Ge-Au Eutectic Bonding of Ge{100} Single Crystals," J. Low Temp. Physics, 93,343-348 (1993).[pdf:670k]
  • P.Etchegoin, H. D. Fuchs, J. Weber, M. Cardona, L. Pintschovius, K. Itoh, and E.E. Haller, "Phonons in Isotopically Disordered Ge," Phys. Rev. B. 48,12661-12671 (1993).[pdf:1.85M]
  • H.D. Fuchs, P. Etchegoin, M. Cardona, K. Itoh and E. E. Haller, "Vibrational Band Modes in Germanium:Isotopic Disorder-Induced Raman Scattering," Phys. Rev. Lett. 70, 1715-1718 (1993).[pdf:665]
  • Gordon Davies, Joachim Hartung, V. Ozhogin, K. Itoh, W. L. Hansen and E. E. Haller, "Effects of Isotope Disorder onPhonons in Germanium Determined from Bound Exciton Luminescence," Semic. Sci. and Technol. 8, 127-130(1993).[pdf:240k]
  • K.M. Itoh, W. L. Hansen, E. E. Haller, J. W. Farmer, V. I. Ozhogin, A. Rudnev and A.Tikhomirov, "High PurityIsotopically Enriched 70Ge and 74Ge Single Crystals:Isotope Separation, Purification and Growth," J. Mater. Res. 8, 1341-1347 (1993). [pdf:500k]
  • G.Davies, E. C. Lightowlers, K. Itoh, W. L. Hansen, E. E. Haller and V. Ozhogin,"Isotope Dependence of the IndirectEnergy Gap of Germanium," Semic. Sci. and Technol. 7, 1271-1273 (1992). [pdf:180k]
  • P.Etchegoin, J. Weber, M. Cardona, W. L. Hansen, K. Itoh, and E. E. Haller, "Isotope Effect in Ge: APhotoluminescence Study," Sol. State Comm. 83, 843-848 (1992).[pdf:340k]
  • H.D. Fuchs, C. H. Grein, M. Cardona, W. L. Hansen, K. Itoh, and E. E. Haller, "Isotopic Disorder-Effects on thePhonons in Germanium," Sol. State Comm. 82, 225-228 (1992).[pdf:195k]
  • H.D. Fuchs, C. H. Grein, C. Thomson, M. Cardona, W. L. Hansen, K. Itoh, and E. E.Haller, "A Comparison of the PhononSpectra of 70Ge and Natural Ge Crystals: Effects of IsotopicDisorder," Phys. Rev. B 43,4835-4842 (1991).[pdf:1.10M]

Conference Papers
2000 - Present
  • Y. Shimizu and K. M. Itoh, "Self-Diffusion of Si at Low Temperatures Revealed by Annealing and Raman Spectroscopy of Si Isotope Superlattices," AIP Conference Proceedings, 28th International Conference on the Physics of Semiconductors, July 24-28, 2006, Vienna, Austria, 893, 205-206 (2007).
  • T. Yamada and K. M. Itoh, "Optical and ElectricalCharacterization of Free Standing 3C-SiC Films Grown on Undulant 6-inch Si Substrates," Proceedings of the InternationalConference on Silicon Carbide and Related Materials 2001, October 29-November2, 2001, Tsukuba, Japan, Materials Science Forum, 389-393, 675-678(2002).
  • K. Morita, K. M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi, Y. Shiraki, and E. E.Haller, "Raman Spectra of 70Ge/76Ge IsotopeHeterostructures with Argon 488nm and 514.5nm Excitations," Proceedings ofthe 10th International Conference on Phonon Scattering in CondensedMatter, August 12-17, 2001, New Hampshire, USA, Physica B, 316-317, 561-564(2002).
  • K. M. Itoh, "Metal-Insulator Transition in Doped Semiconductors," Proceedings of the 25th InternationalConference on Physics of Semiconductors, September 17-22, 2000, Osaka, Japan(Springer Proceedings in Physics Vol. 87, Berlin, 2001), p. 128-131.
  • M. Watanabe, K. M. Itoh, M. Morishita, Y. Ootuka,and E. E. Haller "Critical Exponents for the Metal-Insulator Transition of 70Ge:Gain Magnetic Field," Proceedings of the 25th InternationalConference on Physics of Semiconductors, September 17-22, 2000, Osaka, Japan(Springer Proceedings in Physics Vol. 87, Berlin, 2001), p. 152-153.
  • K. Morita, K. M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi,Y.Shiraki, and E. E. Haller, "First- and Second-Order Raman Spectroscopy of 70Gen/76GenIsotope Superlattices," Proceedings of the 25th InternationalConference on Physics of Semiconductors, September 17-22, 2000, Osaka, Japan(Springer Proceedings in Physics Vol. 87, Berlin, 2001), p. 877-878.
  • H. Iwata and K. M. Itoh, Theoretical Calculation of the Electron Hall Mobility in n-typ 4H- and 6H-SiC, in Proc. of The Intnl. Conf. On Silicon Carbide and Related Materials, edited by R. P. Devaty and G. Rohrer, Materials Science Forum 338-342, 729-732 (2000).
1990 - 1999
  • C. Hagiwara, K. M. Itoh, J. Muto, H. Nagasawa, K. Yagi, H. Harima, K. Mizoguchi, and S. Nakashima,  "Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-inch Si Substrates," Proc. of the 'Intl. Conf. on Silicon Carbide, III-nitrides and RelatedMaterials - 1997,' edited by H. Morkoc and G. Pensl, Materials Science Forum, 264 & 268, 669-672 (1998).
  • T. Kinoshita, M. Schadt, K. M. Itoh, J. Muto, G. Pensl, and K. Takeda, "Calculation of the Anisotropy of the Hall Mobility in N-type 4H- and 6H-SiC," Proc. of the 'Intl. Conf. on Silicon Carbide, III-nitrides and Related Materials - 1997,' edited by H. Morkoc and G. Pensl, Materials Science Forum, 264 & 268, 295-298 (1998).
  • M. Watanabe, Y. Ootuka, K. M. Itoh, and E. E. Haller, "Electrical Properties of Neutron-Transmutation Doped 70Ge:Ga Near the Metal-Insulator Transition," in Proc. of 'The 23rd Intl. Conf. on the Physics of Semiconductors,' (World Scientific, Singapore, 1997) CD-ROM.
  • K. M. Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer, and V. I. Ozhogin, "Ionized Impurity Scattering in Isotopically Engineered Compensated Ge:Ga,As", Proc. of 'The 19th Intl. Conf. of Defects in Semiconductors,' edited by G. Davies and N. H. Nazare, Materials Science Forum, 258 & 263, 77-82 (1997).
  • Pajot, E. Artacho, L. I. Khirunenko, K. Itoh, and E. E. Haller, "Matrix-Insuced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium," Proc. of 'The 19th Intl. Conf. of Defects in Semiconductors,' edited by G. Davies and N. H. Nazare, Materials Science Forum, 258 & 263, 41-46 (1997).
  • N. Aichele, U. Ommel, K. Lassmann, F. Maier, F. Zeller, E. E. Haller, K. M. Itoh, L. I. Khirunenko, V. Shkhovtsov, B. Pajot, E. Fogarassy, and H. M.Òig, "Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium," Proc. of 'The 19th Intl. Conf. of Defects in Semiconductors,' edited by G. Davies and N. H. Nazare, Materials Science Forum, 258 & 263, 47-52 (1997).
  • E. Haller, K. M. Itoh, and J. W. Beeman, "Neutron Transmutation Doped Germanium Thermistors for Sub-mm Bolometer Application," Submillimetre and Far-Infrared Space Instrumentation, The 30th ESLAB Symposium, 24-26 Sept., 1996, ESTEC, Nordwijk, The Netherland.
  • K. M. Itoh, W. Walukiewicz, N. M. Haegel, O. D. Dubon, J. W. Beeman, J. Muto, and E. E. Haller, "Carrier Scattering by Neutral Double Donors and Acceptors: Theory and Experiment," Proc. of 'The 7th Intl. Conf. on Shallow Centers in Semiconductos,' edited by C.A.J. Ammerlaan and B. Pajot, (World Scientific, Singapore, 1997), p. 141-146.
  • K. M. Itoh, W. Walukiewicz, J. W. Beeman, E. E. Haller, A. J. Mayur, Hyunjung Kim, M. D. Sciacca, A. K. Ramdas, R. Buczko, J. W. Farmer, and V. I. Ozhogin, "Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As," Proc. of 'The 18th Intl. Conf. on Defects in Semiconductors,' ed. H. Katayama-Yoshida, Materials Science Forum 117 & 118, 127-132 (1995).
  • M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I. Ozhogin, "Neutral Impurity Scattering in Isotopically Engineered Ge," in Proc. of 'The 22nd Intl. Conf. on the Physics of Semiconductors,' ed. D. J. Lockwood, (World Scientific, Singapore, 1995), p. 81-84.
  • P. Etchegoin, H. D. Fuchs, C. H. Grein, K. Itoh, E. E. Haller, and M. Cardona, "Disorder-Induced Raman Scattering in 70Ge(1-x) 76Gex Isotopic Alloys," in Proc. of 'The 22nd Intl. Conf. on the Physics of Semiconductors,' ed. D. J. Lockwood, (World Scientific, Singapore, 1995), p. 277-280.
  • Parks, A. K. Ramdas, S. Rodriguez, K. M. Itoh, and E. E. Haller, "Isotopic Mass Dependence of the Electronic Band Structure and the Vibrational Spectrum of Germanium," in Proc. of 'The 22nd Intl. Conf. on the Physics of Semiconductors,' ed. D. J. Lockwood (World Scientific, Singapore, 1995), p. 165-168.
  • K. Itoh, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I. Ozhogin, "Compensation Dependence of Ga Impurity Absorption Spectra in Highly Compensated Ge:Ga,As,"  in Proc. of 'The 6th Intl. Conf. on the Shallow Level Centers in Semiconductors,' Sol. State Comm. 93, 456 (1995).
  • Y. Harada, K. Fujii, T. Ohyama, E. E. Haller, and K. Itoh, "Stark-Broadening by Inhomogeneous Electric Field in Compensated Germanium," in Proc. of 'The 6th Intl. Conf. on the Shallow Level Centers in Semiconductors,'Sol. State Comm. 93, 455 (1995).
  • E. Haller, K. M. Itoh, J. W. Beeman, W. L. Hansen, and V. I. Ozhogin, "Neutron Transmutation Doped Natural and Isotopically Engineered Germanium Thermistors," Proc. of 'The SPIE Symposium on Astronomical Telescopes and Instrumentation for the 21st Century,' Kona, Hawaii, March 13-18, 1994, SPIE proceedings series vol. 2198, 630-637(1994).
  • K. Itoh, W. L. Hansen, E. E. Haller, J. W. Farmer and V. I. Ozhogin,  "Neutron Transmutation Doping of Isotopically Controlled Germanium," Proc. of 'The 5th Intl. Conf. on Shallow Impurities in Semiconductors: Physics and Control of Impurities,' ed. T. Taguchi, Materials Science Forum 117 & 118, 117-122 (1993).
  • Gordon Davies, E. C. Lightowlers, V. Ozhogin, K. Itoh, W. L. Hansen and E. E. Haller, "Isotopic Dependence of Near-Bandgap Luminescence from Germanium," Proc. of 'The 5th Intl. Conf. on Shallow Impurities in Semiconductors: Physics and Control of Impurities,' ed. T. Taguchi, Materials Science Forum 117 & 118, 111-116 (1993).